advanced power dual n-channel mosfet with electronics corp. schottky diode simple drive requirement ch-1 bv dss 30v easy for synchronous buck r ds(on) 11m converter application i d 32a rohs compliant & halogen-free ch-2 bv dss 30v r ds(on) 7m description i d 47a absolute maximum ratings symbol parameter units ch-2 v ds drain-source voltage 30 v v gs gate-source voltage + 12 v i d @t c =25 continuous drain current (chip limited) 47 a i d @t a =25 continuous drain current 3 , v gs @ 10v 18.5 a i d @t a =70 continuous drain current 3 , v gs @ 10v 14.8 a i dm pulsed drain current 1 60 a p d @t a =25 total power dissipation 3.9 w t stg storage temperature range t j operating junction temperature range ch-2 rthj-c 5 /w rthj-a 32 /w rthj-a 60 /w data & specifications subject to change without notice -55 to 150 3.13 40 30 maximum thermal resistance, junction-ambient 3 6.5 40 70 thermal data 201202291 symbol ch-1 rating units parameter 1 maximum thermal resistance, junction-case maximum thermal resistance, junction-ambient 4 halogen-free product -55 to 150 + 20 ap6923gmt-hf 32 12.8 10.2 rating ch-1 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g1 d1 d1 d1 pmpak ? 5x6 g2 s2 s2 s2 g1 d1 d1 d1 g2 s2 s2 s2 s1/d2 d1 the control mosfet (ch-1) and synchronous mosfet (ch-2) co-package for synchronous buck converters. g1 g2 d1 d2/s1 s2
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - 8.7 11 m ? v gs =4.5v, i d =6a - 14.3 18.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.6 3 v g fs forward transconductance v ds =10v, i d =10a - 20 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =10a - 10 16 nc q gs gate-source charge v ds =15v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =1a - 4.5 - ns t d(off) turn-off delay time r g =3.3 ? -21- ns t f fall time v gs =10v - 4 - ns c iss input capacitance v gs =0v - 1150 1840 pf c oss v ds =15v - 135 - pf c rss reverse transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 21 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc 2 ap6923gmt-hf
ap6923gmt-hf ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - 5.6 7 m v gs =4.5v, i d =10a - 8.7 11.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =15a - 28 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =15a - 17 27.2 nc q gs gate-source charge v ds =15v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 8 - nc t d(on) turn-on delay time v ds =15v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ? -32- ns t f fall time v gs =10v - 8 - ns c iss input capacitance v gs =0v - 2000 3200 pf c oss output capacitance v ds =15v - 250 - pf c rss reverse transfer capacitance f=1.0mhz - 180 - pf r g gate resistance f=1.0mhz - 1 2 source-drain diode symbol parameter test conditions min. typ. max. units v sd diode+schottky forward on voltage 2 i s =1a, v gs =0v - 0.48 0.5 v t rr body diode+schottky reverse recovery time i s =10a, v gs =0 v , - 25 - ns q rr body diode+schottky reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec. 4.surface mounted on 1 in 2 copper pad of fr4 board, on steady-state. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
a p6923gmt-h f channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0 2 4 6 8 10 00011111 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 8 10 12 14 16 18 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap6923gmt-h f channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 5 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =70 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 400 800 1200 1600 2000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 60 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
a p6923gmt-h f channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 2 4 6 8 10 0001111 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 5 6 7 8 9 10 11 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =10a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =10ma
ap6923gmt-h f channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 7 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =60 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =15v 0 400 800 1200 1600 2000 2400 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 60 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
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